Call for Abstracts

Important Dates

Start of Abstract Submission: November 14, 2025
Abstract Submission Deadline: April 15, 2026
Notification of Abstract Acceptance: June 15, 2026

Guidelines for Submission

  • All abstracts must be submitted in English.
  • Enter the paper title, all authors, and the abstract body in the respective fields. The abstract body may contain up to 300 words which correspond with an A4 page.
  • Optionally you can upload up to 2 images. The size of each uploaded file cannot exceed the limit of 10 MB. Please ensure the image is clear and legible when reduced to approximately 1/6 A4 size, even if printed in black and white.
  • Standard abbreviations do not need explanation. Otherwise, abbreviations must be defined in brackets when first used in the text.
  • The authors are responsible for the content and the language quality of the abstract.
  • An automatically generated confirmation will be sent to your e-mail address. If you do not receive it within an hour, first please check your spam folder and then contact us at iit-abstracts@guarant.eu.
  • If changes to your submitted abstract are necessary, you can edit your abstract any time before the abstract submission deadline. Please do not submit your abstract more than once.
  • Authors will be notified of the acceptance of their abstracts by e-mail by 15 June 2026.
  • The presenting author of each accepted abstract is required to register for the conference, attend, and deliver the presentation in the session and time allocated by the Program Committee. If needed, one of the co-authors may take over the presentation.

If you have any questions regarding abstract submission, please contact us at iit-abstracts@guarant.eu.

Abstract Submission Form

Scope of Conference Topics

Advanced Equipment for Ion Implantation, Annealing, and Metrology

  • Tools for beam line ion implantation, plasma doping, cluster, and molecular ion beams
  • Equipment for thermal and a-thermal annealing (laser, microwave, flash, neutral beams, etc.)
  • New material solutions and techniques for equipment technology
  • Metrology equipment for implantation control (particles, contamination, charging, etc.) and for implanted layers (implant profiling, sheet resistance, etc.)
  • Non-mainstream ion implantation / annealing methods (using plasma, high energy ions, atomic clusters, ion beam mixing, etc.)
  • Advanced process control (tool software assisted, fab solutions, “tool health factors”, digital twin)
  • Leveraging AI and machine learning for equipment and process optimization

Ion Implantation and Annealing Technology of Semiconductor and Non-Semiconductor Materials

  • Ion implantation and annealing of Si, Ge, SiC, GaN and other III-V semiconductors, graphene, exotic materials
  • Advanced junction formation by special annealing techniques
  • Surface modification by annealing techniques and ion implantation
  • New doping techniques: monolayer doping, atomic layer deposition, selective CVD/epi, MOCVD, laser-assisted doping, thermal and recoil mixing methods
  • Layer transfer for heterogeneous materials integration, 3D IC stacking
  • Comparison of different annealing techniques

Device Technology and Applications for Ion Implantation and Annealing

  • Power and RF devices (Si, Ge, SiC, GaN, etc.)
  • Large area devices (displays, solar cells, wearables, etc.)
  • LEDs, MEMS, image sensors, chemical and physical sensors
  • Planar and non-planar, emerging CMOS (FinFETs, nanowires, etc.), 3D memories
  • Junction contact and metal gate work function engineering
  • Photonic devices: CMOS-photonic integration, materials for multi-dimensional photonic signal processing and transmission, vertical-cavity surface-emitting lasers
  • Nano-scale device fabrication for quantum confined films, wires and dots, quantum information processing
  • Metrology methods: elemental, electrical, and morphological analysis of 3D devices, junctions, strain, interfaces and contacts
  • New materials for devices

Modeling, Simulation and Metrology of Ion Implantation and Annealing

  • Defect generation due to ion irradiation in substrates and its annealing
  • Sputtering and surface modification due to ion bombardment and strategies for defect mitigation
  • Ion beam assisted methods for near-surface material analysis (SIMS, RBS, etc.)
  • New metrological technologies for characterization of implanted and/or annealed surfaces / devices
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