Scope of Conference Topics
Advanced Equipment for Ion Implantation, Annealing, and Metrology
- Tools for beam line ion implantation, plasma doping, cluster, and molecular ion beams
- Equipment for thermal and a-thermal annealing (laser, microwave, flash, neutral beams, etc.)
- New material solutions and techniques for equipment technology
- Metrology equipment for implantation control (particles, contamination, charging, etc.) and for implanted layers (implant profiling, sheet resistance, etc.)
- Non-mainstream ion implantation / annealing methods (using plasma, high energy ions, atomic clusters, ion beam mixing, etc.)
- Advanced process control (tool software assisted, fab solutions, “tool health factors”, digital twin)
- Leveraging AI and machine learning for equipment and process optimization
Ion Implantation and Annealing Technology of Semiconductor and Non-Semiconductor Materials
- Ion implantation and annealing of Si, Ge, SiC, GaN and other III-V semiconductors, graphene, exotic materials
- Advanced junction formation by special annealing techniques
- Surface modification by annealing techniques and ion implantation
- New doping techniques: monolayer doping, atomic layer deposition, selective CVD/epi, MOCVD, laser-assisted doping, thermal and recoil mixing methods
- Layer transfer for heterogeneous materials integration, 3D IC stacking
- Comparison of different annealing techniques
Device Technology and Applications for Ion Implantation and Annealing
- Power and RF devices (Si, Ge, SiC, GaN, etc.)
- Large area devices (displays, solar cells, wearables, etc.)
- LEDs, MEMS, image sensors, chemical and physical sensors
- Planar and non-planar, emerging CMOS (FinFETs, nanowires, etc.), 3D memories
- Junction contact and metal gate work function engineering
- Photonic devices: CMOS-photonic integration, materials for multi-dimensional photonic signal processing and transmission, vertical-cavity surface-emitting lasers
- Nano-scale device fabrication for quantum confined films, wires and dots, quantum information processing
- Metrology methods: elemental, electrical, and morphological analysis of 3D devices, junctions, strain, interfaces and contacts
- New materials for devices
Modeling, Simulation and Metrology of Ion Implantation and Annealing
- Defect generation due to ion irradiation in substrates and its annealing
- Sputtering and surface modification due to ion bombardment and strategies for defect mitigation
- Ion beam assisted methods for near-surface material analysis (SIMS, RBS, etc.)
- New metrological technologies for characterization of implanted and/or annealed surfaces / devices


