Scope of Conference Topics

Advanced Equipment for Ion Implantation, Annealing, and Metrology

  • Tools for beam line ion implantation, plasma doping, cluster, and molecular ion beams
  • Equipment for thermal and a-thermal annealing (laser, microwave, flash, neutral beams, etc.)
  • New material solutions and techniques for equipment technology
  • Metrology equipment for implantation control (particles, contamination, charging, etc.) and for implanted layers (implant profiling, sheet resistance, etc.)
  • Non-mainstream ion implantation / annealing methods (using plasma, high energy ions, atomic clusters, ion beam mixing, etc.)
  • Advanced process control (tool software assisted, fab solutions, “tool health factors”, digital twin)
  • Leveraging AI and machine learning for equipment and process optimization

Ion Implantation and Annealing Technology of Semiconductor and Non-Semiconductor Materials

  • Ion implantation and annealing of Si, Ge, SiC, GaN and other III-V semiconductors, graphene, exotic materials
  • Advanced junction formation by special annealing techniques
  • Surface modification by annealing techniques and ion implantation
  • New doping techniques: monolayer doping, atomic layer deposition, selective CVD/epi, MOCVD, laser-assisted doping, thermal and recoil mixing methods
  • Layer transfer for heterogeneous materials integration, 3D IC stacking
  • Comparison of different annealing techniques

Device Technology and Applications for Ion Implantation and Annealing

  • Power and RF devices (Si, Ge, SiC, GaN, etc.)
  • Large area devices (displays, solar cells, wearables, etc.)
  • LEDs, MEMS, image sensors, chemical and physical sensors
  • Planar and non-planar, emerging CMOS (FinFETs, nanowires, etc.), 3D memories
  • Junction contact and metal gate work function engineering
  • Photonic devices: CMOS-photonic integration, materials for multi-dimensional photonic signal processing and transmission, vertical-cavity surface-emitting lasers
  • Nano-scale device fabrication for quantum confined films, wires and dots, quantum information processing
  • Metrology methods: elemental, electrical, and morphological analysis of 3D devices, junctions, strain, interfaces and contacts
  • New materials for devices

Modeling, Simulation and Metrology of Ion Implantation and Annealing

  • Defect generation due to ion irradiation in substrates and its annealing
  • Sputtering and surface modification due to ion bombardment and strategies for defect mitigation
  • Ion beam assisted methods for near-surface material analysis (SIMS, RBS, etc.)
  • New metrological technologies for characterization of implanted and/or annealed surfaces / devices
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