Conference Detailed Program

16:00–19:00

Conference Registration

08:00–09:00

Conference Registration

09:30–10:00

K-1: AI Automation and Robots – From Manufacturing to Autonomy
Andreas Kugi (AIT Austrian Institute of Technology GmbH & Technische Universität Wien, Austria)

10:00–10:30

K-2: Powering AI – Architectural Challenges in Hyperscale Datacenters and our Solutions
Gerald Deboy (Infineon Technologies Austria AG, Austria)

10:30–11:00

K-3: Tiny chips. Big impact-Production Requirements for the next Generation of Semiconductors
Alina Absmeier (Infineon Technologies Austria AG, Austria)

11:30–11:45

Q & A for Keynotes

11:45–11:50

“In Memoriam”
Kevin Jones (IIT International Committee Chair)

11:50–12:20

I-1: Innovational journey of ion implanters along device technology evolution
Hiro Ito (Applied Materials, Japan)

12:20–12:40

O-1: Market-Driven Roadmap for Implantation and Annealing Equipment in Semiconductor Manufacturing
Clara Grcevic (Yole Group, France)

12:40–13:00

O-2: Purion XEmax Ultra-High Energy Channeled Implantation as an Enabling Technology for SiC Superjunction MOSFETs
Wilhelm Platow (Axcelis Technologies, USA)

14:00–14:30

I-2: Anneal Technology in CMOS manufacturing Evolution and Synergy Opportunities with Implant
Sagar Ashutosh (Intel Corporation, USA)

14:30–14:50

O-3: Ultraviolet Laser Annealing of Nickel Silicide Contacts for Advanced SiC Power Devices
Marurice Clair (3D-Micromac AG, Germany)

14:50–15:10

O-4: Plasma Annealing for High-Efficiency Dopant Activation at Ultra-Low Temperatures in Semiconductor Processing
Yuanning Chen (Microsol Technologies Inc, USA)

15:10–15:30

O-5: Limits and Reproducibility of High-Ohmic Polycrystalline Silicon Resistors for Silicon Device Fabrication
Matthias Wauro (Fraunhofer EMFT, Germany)

16:00–16:30

I-3: RTP Conditioning of Electrical Contacts in MEMS Pressure Sensors for Harsh Environmental Applications
Roy Knechtel (Schmalkalden University of Applied Sciences, Germany)

16:30–16:50

O-6: Novel Rapid Thermal Processing to Enable Continued Scaling of Semiconductor Devices
Shashank Sharma (Applied Materials, USA)

16:50–17:10

O-7: VIISta Javelin™ High Productivity Ion Implantation for SiC
Shardul Patel (Applied Materials, USA)

17:10–17:30

O-8: A World of Molybdenum & Tungsten: The Role of Refractory Metals in Semiconductor Applications
Hendrik Hotz (Plansee SE, Austria)

P-2: Wafer Contact Surface Coatings for High-Temperature Electrostatic Chucks
Nilesh Gunda (Entegris, Inc., USA)

P-3: Low cost high current metal ion source
Vladimir Romanov (Axcelis Technologies, USA)

P-4: Beam Density Optimization for Polysilicon Sheet Resistance Matching between Single and Batch Wafer Implanters
Bohesharvind Naraiyanan Murthi (Infineon Technologies, Malaysia)

P-5: Reduction of wafer edge exclusion zone through improved wafer cooling in electrostatic chucks
Jakub Rybczynski (Entegris, Inc., USA)

P-6: Three-Dimensional Primary Electron Trajectory Simulation in a Large-Area Multi-cusp Ion Source for FPD Ion Implantation
Tae-Seong Kim (Korea Atomic Energy Research Institute, Korea)

P-7: Extended Carbon life with the Dedicated Carbon Source on VIISta™ Trident Implanters
Zachary Page (Applied Materials, USA)

P-8: Comparison of two Commercially Available Boron Trifluoride and Hydrogen Gas Mixes in Production Application for High Current Ion Implantation
Ronald Johnson (Microchip Technology, Inc, USA)

P-9: Optimization of Surface Temperature Control for Arcing Suppression and Source Bushing Life Extension in High-Current Ion Implanters
Hyun jun Kim (SK hynix Semiconductor, Korea & Hanyang University, Korea)

P-10: Preliminary Design of a Faraday Cup Array with Secondary Electron Suppression for Large-Area Ion Beam Characterization
Sung-Ryul Huh (Korea Atomic Energy Research Institute, Korea)

P-11: Enhancement of Multiply charged ion Generation Efficiency by Applying a Bias Voltage to the Arc Chamber Lid
Yuta Iwanami (Nissin Ion Equipment Co., Ltd., Japan)

P-12: Enhancing production efficiency of multicharged ions using lower hybrid resonance heating in electron cyclotron resonance ion source
Shinji Tokuno (University of Osaka, Japan)

P-13: Realtime Beam Shape Monitor for Next Generation Dose Uniformity Optimization
Grace Tkach (Axcelis Technologies, USA)

P-14: Purion H6: Next Generation High Current Ion Implanter
Grace Tkach (Axcelis Technologies, USA)

P-15: Introducing the MAXion-H ion implantation system
Gordon Murray (Ion Beam Services UK Ltd., UK)

P-16: Asymmetrical ion and electron distribution charging
Sarko Cherekdjian (NUSANO, USA)

P-17: Modern semiconductor ion implanters with an “Achilles heel”
Sarko Cherekdjian (NUSANO, USA)

P-18: Introduction of the VIISta® HCP+ Implanter and Process Development at the Entegris Ion Implant Process Efficiency Research Laboratory (IIPERL)
Ying Tang (Entegris Inc., USA)

P-19: Investigation of Electrical Breakdown Risks and Safety Considerations in Remote Gas Delivery for High-Voltage Ion Implant Systems
Ying Tang (Entegris Inc., USA)

P-20: VIISta™ Trident High -Current Beam Setup and Utilization time Improvement with AI
Sruthi Chennadi (Applied Materials, USA)

P-21: Beam Uniformity Control System for the Low-Energy High-Current Ion Implanter
Taido Kurauchi (Nissin Ion Equipment Co., Ltd., Japan)

P-22: Beam Transport, Beam Height, and Angle Control for High-Perveance Ion Implantation on the VIISta™ Trident
Joanna Montgomery (Applied Materials, USA)

P-23: A Charge Compensation Study for High Current Implant Tools
Katja Brockhaus (Infineon Technologies, Germany)

P-24: Deep and Flat Profile Formation by Tilt-Angle Modulation at Fixed Energy in High-Energy Ion Implantation
Shintaro Hirano (Sumitomo Heavy Industries Material Solutions Co., Ltd., Japan)

P-25: Effect of Oxygen on the Enhancement of Molecular Ion Beam Current
Rei Hirao (Nissin Ion Equipment Co., Ltd., Japan)

P-26: Beam Position Measurement for a High-Energy Ion Implantation System
Mikio Yamaguchi (Sumitomo Heavy Industries Material Solutions Co., Ltd., Japan)

P-27: Additive Manufacturing for Refractory Metal Alloys – Alternative Materials for IHC Source Components
Jessica Morette (Plansee USA LLC, USA)

P-28: Enhanced production of multicharged ions by helical antennas for microwaves and investigating influences of low frequency electromagnetic waves antennas on electron cyclotron resonance ion source
Daichi Inoue (University of Osaka, Japan)

P-29: Study of Ion Beam Density on Implantation Profile and Device Tuning
Tie Liu (Beijing Electric Control Integrated Circuit Manufacturing Co., Ltd, China)

P-30: Design of High-Tilt Angle Ion Beam Apparatus Achieving Ultra-Low Defect Performance
Ting-Qian Sun (Advanced Ion Beam Technology, Inc., Taiwan)

P-31: RTP at very low Temperatures
Martin Albrecht (Mattson Thermal Products gmbH, Germany)

P-32: Long-Life, Low-Discharge Multicusp Ion Source for FPD Implanters
Yasushi Ota (Nissin Ion Equipment Co., Ltd., Japan)

08:00–08:30

Conference Registration

08:30–09:00

I-4: Profile engineering of ion implantation doping into GaN for vertical power device applications
Tetsuo Narita (Toyota Central R&D Labs., Inc., Japan)

09:00–09:20

O-9: Channeling-Assisted Al Implantation in 4H-SiC: Energy Dependence, Damage Effects, and Process Window
Manuel Belanche Guadas (APS – ETH Zurich, Switzerland)

09:20–09:40

O-10: Reduced complexity of ion implantation recipes by channeling
Gerhard Kunkel (Hitachi Energy, Switzerland)

09:40–10:00

O-11: Channeling Implantation Solutions for Advanced SiC Power Devices
Supakit Charnvanichborikarn (Applied Materials, USA)

10:30–11:00

I-5: Annealing as an Application for Implantation
Michael Willemann (Veeco Instruments Inc., USA)

11:00–11:20

O-12: Impact of Stacking Density on Implant Profiles of Unchanneled Implants in Silicon Carbide
Sean Jones (Axcelis Technologies, USA)

11:20–11:40

O-13: Laser Irradiation Effect during Implant on Si and SiC Substrate
TaeHoon Huh (Sumitomo Heavy Industries Material Solutions Co., Ltd., Japan)

11:40–12:00

O-14: Enhancement of Ion Beam Current Using Al–Intermetallic Compound Targets in Ion Implantation Sources
Daisuke Matsuo (Nissin Ion Equipment Co., Ltd., Japan)

12:00–12:20

O-15: A Method for Generating CF_x⁺ Ion Beams for Low-Energy High-Current Implanter
Tomoaki Seki (Nissin Ion Equipment Co., Ltd, Japan)

12:20–12:40

O-16: Patterned silicon nanostructure fabrication in photovoltaics by ion implantation
Frederic Milesi (University Grenoble Alpes, CEA-Leti, France)

08:00–08:30

Conference Registration

08:30–09:00

I-6: From Imaging to Quantification: Advanced TEM for Implantation-Induced Defects in Crystalline Material
Nikolay Cherkashin (University of Toulouse, CNRS, CEMES, France)

09:00–09:20

O-17: Creation and localization of single W centers in silicon for the fabrication of a single photon source
Frederic Mazen (CEA-LETI, France)

09:20–09:40

O-18: Dynamic SIMS Characterization of Dopants in SiC for Advanced Power Electronics
Paula Peres (CAMECA-AMETEK, France)

09:40–10:00

O-19: Physics-Based Modeling of Sputtering, Deposition, and Surface Evolution in High-Current Ion Implant Process Chambers
Joanna Montgomery (Applied Materials, USA)

10:30–11:00

I-7: Unit Processes as Technology Differentiators
Wolfgang Diewald (Infineon Technologies Austria AG, Austria)

11:00–11:20

O-20: Wafer-Scale Si₃N₄ Photonic Integrated Tunable Lasers Enabled by Er Ion Implantation
Taegon Kim (Applied Materials, USA)

11:20–11:40

O-21: Isotopically selective 73Ge Ion implantation on a BiCMOS pilot line for scalable nuclear spin qubit fabrication
Fabian Fidorra (IHP-Leibniz-Institut für innovative Mikroelektronik, Germany)

11:40–12:00

O-22: Helium Implantation for Local Trapping layers for Radio Frequencies applications
Pablo Acosta (CEA-Leti, University Grenoble Alpes, France)

P-34: Ion Implantation Doping in Double-SOI Structures for Dual-Channel Tunneling Transistors
Shengqiang Zhou (Helmholtz-Zentrum Dresden-Rossendorf, Germany)

P-35: Advanced SIMS approaches for spatially resolved dopant and impurity analysis in SiC power devices
Seishi Akahori (Toray Research Center Inc., Japan)

P-36: Mobility Effects in Hydrogen-Related Donor Profiling: A Dopant-Dependent Model for Proton-Implanted Silicon
Andrea Fugger (Infineon Technologies Austria AG & Technische Universität Wien, Austria)

P-37: Thermal Probe (TP) measurements for Ion Implantation monitoring on silicon carbide substrates
Refat Soliman (Infineon Technologies Austria AG, Austria)

P-38: β-Ga₂O₃ Smart Cut™: a study of ion implantation
Frederic Mazen (CEA-LETI, France)

P-39: An improved method for low dose implant monitoring with enhanced accuracy and sensitivity
Md Shadab Anwar (Infineon Technologies, Germany)

P-40: Cryogenic Co-Implantation for Improved Short-Channel Control and Variability in Advanced DRAM Technologies
Baonian Guo (Applied Materials, USA)

P-41: Impact of Cryogenic Ge Pre-Silicide Implantation on Cobalt Silicide Formation in 3D NAND Devices
Baonian Guo (Applied Materials, USA)

P-42: In-Situ Electrostatic Chuck Cleaning and Interferometric Metrology for Particle Control in Ion Implantation Tools
Yuxuan Liu (Entegris, Inc., USA)

P-43: Tensile and compressive Nitride stress relaxation and inversion with Plasma Immersion Ion Implantation
Nada Zerhouni Abdou (Université Grenoble Alpes, CEA, Leti, France)

P-44: Recrystallization of boron doped silicon through solid-phase epitaxial regrowth by nanosecond laser annealing
Alan Le Boterf (Université Grenoble Alpes, France)

P-45: Exploration of ion irradiation induced ferromagnetic ordering in wide band gap semiconductors
Nianhua Peng (University of Surrey, UK)

P-46: Beam Energy Measurement System on Purion XE Series High Energy Ion Implanters
William Rogers (Axcelis, USA)

P-47: High active phosphorus concentrations in silicon regrown by solid-phase epitaxy using nanosecond laser annealing
Sébastien Kerdilès (Université Grenoble Alpes, CEA-LETI, France)

P-48: Oxidation Induced Epitaxy (OIE) of SiGe on Si
Kevin Jones (University of Florida, USA)

P-49: Implanted Electrical Contacts for Self-Amplified Nano Resonators
Kevin Jones (University of Florida, USA)

P-50: Flash Lamp Annealing for Defect Repair and Performance Enhancement in High-Sn GeSn
Yu-Hsien Chuang (National Taiwan University, Taiwan & Helmholtz-Zentrum Dresden-Rossendorf, Germany)

P-51: Enhancement of BJT Current Gain by Cold Ion Implantation on VIISta™ Trident XP2 in 65 nm BCD Technology
Sipeng Gu (Applied Materials, USA)

P-52: Optimization of the Medium Current Source Power to Improve the Device White-pixel Performance in CIS Application
Sipeng Gu (Applied Materials, USA)

P-53: Advanced Joining Technologies for Refractory Metal–Ceramic Systems Enabling Extended Ion Implantation Temperature Regimes
Serafin Knitel (Plansee SE, Austria)

P-54: Control of Film Thickness Distribution Within a Wafer by Mapping-Based Intentional Non-Uniform Dose Ion Implantation
Takuya Sakaguchi (Sumitomo Heavy Industries Material Solutions Co., Ltd., Japan)

P-55: Crystallization of Sn-rich Si and Ge thin films by flash lamp annealing
Lars Rebohle (Helmholtz-Zentrum Dresden-Rossendorf & Helmholtz Innovation Blitzlab, Germany)

P-56: Selective heating effects of mixed low mass number ions in electron cyclotron resonance ion source
Yushi Kato (University of Osaka, Japan)

P-57: Low-temperature monitoring RTP-tools with alloying – long-term results
Martin Grund (X-FAB Semiconductor Foundries GmbH, Germany)

P-58: Qualification of high-energy implanters and a comparison of two C-V techniques
Thomas Obitz (X-FAB Semiconductor Foundries GmbH, Germany)

P-59: Neutron Spectroscopy of Light Ion (α,n) Nuclear Reactions with C and B Targets
Peter DeRosa (Axcelis Technologies, USA)

P-60: Pulsed Soak RTP at very high Temperatures
Martin Albrecht (Mattson Thermal Products gmbH, Germany)

P-61: Ion Implant and Millisecond Laser Anneal Co-optimization for Backside Power Delivery Contacts
Shashank Sharma (Applied Materials, USA)

P-62: Surface Photovoltage Analysis of Proton‑Implanted GaAs for High‑Power Diode Applications
Nadine Schüler (Freiberg Instruments GmbH, Germany)

P-63: Wafer backside particle reduction
Vladimir Romanov (Axcelis Technologies, USA)

14:00–14:30

I-8: Next level sustainable semiconductor production: Supply chain and LCA of RTP and implant systems – a review of first level calculations and conclusions
Juergen Niess (HQ-Dielectrics GmbH, Germany)

14:30–14:50

O-23: LLM-Enhanced Agentic Assistance for Maintenance Operations of Ion Implantation Equipment
Daniel Valtiner (Infineon Technologies Austria AG, Austria)

14:50–15:10

O-24: Blockchain-Enabled Secure Digital Twins for Immutable Traceability in Advanced Ion Implantation and Annealing Processes
Jasleen Kaur (Indian Institute of forest management, India)

15:40–16:10

I-9: Energy and PFAS Chemical Consumption in Semiconductor Manufacturing
Santosh K Kurinec (Rochester Institute of Technology, USA)

16:10–16:30

O-25: AI-Enabled Analytical Engine for Implant Defect Control
Saurabh Parmar (Applied Materials, USA)

16:30–16:50

O-26: Laser-assisted implantation method followed by an activation process by µs UV-laser annealing for the formation of highly doped p-type junctions in SiC
Shintaro Hirano (Sumitomo Heavy Industries Material Solutions Co., Ltd. Japan)

08:00–08:30

Conference Registration

08:30–09:00

I-10: Generation of NV centers for scalable mobile quantum computers at room temperature
Jan Meijer (University Leipzig, Germany)

09:00–09:20

O-27: Quantum Sensing Based On 4H-SiC Spin Color Centers
Stefano Meinardi (Infineon Technologies Austria AG, Austria)

09:20–09:40

O-28: Generation of Vacancy-Based Colour Centres in 4H-Silicon Carbide for Quantum Nanophotonics with Optically Active Spins
Leonard K.S. Zimmermann (Luxembourg Institute of Science and Technology & University of Luxembourg, Luxembourg)

09:40–10:00

O-29: Highly enriched silicon with ion implantation for robust qubits in a large-scale quantum computer device
David N. Jamieson (University of Melbourne, Australia)

10:30–11:00

I-11: The Challenge of Ion Implantation and Annealing perspective on Silicon Carbide Trench MOSFET
Doojin Choi (onsemi, Korea)

11:00–11:20

O-30: SiC Superjunction: The Roads from Lab to Mass Production
Marco Negri (Infineon Technologies, Austria)

11:20–11:40

O-31: Formation of Deep SiC Superjunction Doping Profiles via Energy-Filtered Ion Implantation
Christian T. Plass (mi2-factory GmbH, Germany)

11:40–12:00

O-32: Examination of High-Energy Al Channelling-Implanted 4H-SiC Samples by Advanced Photomodulated Reflectance Technique
Dénes Ullrich (Semilab Semiconductor Physics Laboratory Ltd & Budapest University of Technology and Economics, Hungary)

P-65: Enhanced Hydrogen Ion Beam Current for GSDIII-180
Hiroki Murooka (Sumitomo Heavy Industries Material Solutions Co., Ltd., Japan)

P-66: Investigation of Al Ion Implantation and Post-Implantation Annealing in 4H-SiC by Molecular Dynamics Simulation and Experiment
Sina Seyedibavilolyaei (Free University of Bolzano & FBK, Italy)

P-67: Silicon carbide microstructure modification by H⁺ ion implantation under heating
Louiss Bonnefoy (SOITEC & University Toulouse, CNRS, CEMES, France)

P-68: Comparative Study of Deep Ion Implantation Techniques for n-Type Doping of 4H-SiC
S.M Masum (Ernst-Abbe-Hochschule Jena & mi2-factory GmbH, Germany)

P-69: Improving Within-Wafer Implant Uniformity in 150 mm SiC MOSFET Fabrication Through an Integrated CIP
Raymond Xu (Axcelis Technologies, USA)

P-70: Raman investigation of channeling implantation in SiC: toward lower damage, enhanced activation, and reduced process cost
Frank Torregrosa (IBS – Ion Beam Services, Z.I. de Peynier-Rousset, France)

P-71: Si in-situ doping of InGaAlAs using an industrial MOCVD reactor
Apoorva Pawadi (IHP-Leibniz-Institut für innovative Mikroelektronik, Germany)

P-72: Photoluminescence Based Monitoring of Implant and Activation in n Type 4H SiC Product Wafers
Gerhard Kunkel (Hitachi Energy, Switzerland)

P-73: Remote Vaporizer for Ion Implantation of Al in SiC Power Devices
Brian Dlugosch (Axcelis Technologies, Inc, USA)

P-74: Towards quantum network chips based on optically active spins in silicon carbide
Jonas Schmid (Luxembourg Institute of Science and Technology & University of Luxembourg, Luxembourg)

P-75: Evaluation of Al Implantation Uniformity in 8-inch SiC Wafers by 4-Point-Probe Measurement
Shintaro Hirano (Sumitomo Heavy Industries Material Solutions Co., Ltd., Japan)

P-76: Overcoming the Ohmic Bottleneck in WBG Semiconductors: The Role of Ion Implantation and Advanced Annealing in SiC and GaN Devices
Emmanuele Galluccio (Infineon, Austria)

P-77: High-Energy Multi-Step Channeling Implantation for Superjunction Structures in SiC
Akichika Ono (Sumitomo Heavy Industries Material Solutions Co., Ltd., Japan)

P-78: Silver implanted diamond for antibacterial applications
Nianhua Peng (University of Surrey, UK)

P-79: Electrical Activation of Implanted SiC Using Manufacturing‑Ready Lamp RTP
Peter Benkart (Mattson International GmbH, Germany)

P-80: Room-temperature telecom Si:Te PIN planar photodiodes: a study on optimizing device dimensions
Lars Rebohle (Helmholtz-Zentrum Dresden-Rossendorf, Germany)

P-81: A multi-step implant and anneal approach as an alternative to high-temperature implantation in SiC
Deepthi Devendra (Infineon, Austria)

P-82: Blister Formation in 2D Materials Driven by Out-Diffusion of Implanted Light Species
Vasco Joris (University Grenoble Alpes, CEA, Leti & University Toulouse, CNRS, CEMES, France)

P-83: Development of a Model for Wear and Particle Generation from Graphite Components in Ion Implant Environments
Wayne Hambek (POCO Graphite, Inc. & Entegris, Inc., USA)

P-84: Advanced laser annealing solutions for Si and SiC device manufacturing
Sebastian Geburt (Innovavent GmbH, Germany)

P-85: Impact of Helium Implantation on Deep-Level Defects in 4H-SiC Schottky Diodes for Quantum Color Center Applications
Maximilian Titl (Fraunhofer Institute for Integrated Systems and Device Technology IISB, Germany)

P-86: Near to the future: predictive maintenance combined with automation for more efficient and reliable maintenance
André Apelt (Infineon Technologies, Germany)

P-87: Automated crystal orientation tool for improved assessment of implant channeling in SiC
Cal Stroupe (X-Fab, USA)

P-88: Performance Testing of a Charge Neutralization Device for High-Energy Ion Beams
Lihua Chen (China institute of Atomic Energy, China)

P-89: Defect Repair and Dopant Activation in Boron-Implanted Germanium through Integrated Microwave and Supercritical Fluid Annealing
Tai Chen Kuo (Chung Yuan Christian University & Research Center for Semiconductor Materials and Advanced Optics, Taiwan)

P-90: Aluminum Ion Implantation Beam Current and Performance Improvement through the Investigation of Chloride Materials, Co-gases, and Methods
Ying Tang (Entegris Inc., USA)

P-91: OpenSRIM – An open-source alternative to SRIM
Gerhard Hobler (TU Wien, Austria)

P-92: Challenges in Monitoring Temperature Sensitive Rapid Thermal Annealing Processes using Boron High Dose Ion Implantations
Matthias Schmeide (Infineon Technologies Dresden GmbH, Germany)

P-93: UV Laser Annealing of Polycrystalline Silicon on Insulator
Anthony Albanese (Sumitomo (SHI) Material Solutions Europe, France)

14:00–14:30

I-12: Overview of Ion Implantation and Annealing in CMOS Technology Development for DRAM Devices
Seungwoo Jin (R&D Division, SK hynix, Korea)

14:30–14:50

O-33: Contact module engineering for advanced CMOS nodes at low thermal budget by Gallium and Germanium co-implant
Jan Prominski (Axcelis Technologies Inc., USA)

14:50–15:10

O-34: Introducing Tellurium into the CMOS Line for Silicon Infrared Photonics
Shengqiang Zhou (Helmholtz-Zentrum Dresden-Rossendorf, Germany)