IIT School Program

16 September 2026
(Wednesday)

17 September 2026
(Thursday)

18 September 2026
(Friday)

19 September 2026
(Saturday)

  08:30–09:15 Registration / Welcome 08:30–09:30 Chapter 6:
Metrology for Ion
Implantation and Annealing
Process Control

Matthias Rommel 
08:30–09:30 Chapter 12:
Process Integration and
Application for Logic,
Memory and Image Sensors

Leonard Rubin
09:15–09:30 Opening
09:30–10:30 Chapter 1:
History of Integrated Circuits
& Ion Implantation

Heiner Ryssel
09:30–10:30 Chapter 7:
Ion Beam Purity and
Elemental Contamination

David Kirkwood
09:30–10:30 Chapter 13:
Ion Implantation Challenges
for Power Devices and Wide
Band Gap Materials

Werner Schustereder
10:30–11:00 Coffee Break 10:30–11:00 Coffee Break 10:30–11:00 Coffee Break
11:00–12:00 Chapter 2:
Ion Sources, Beams
& Space Charge Control

Tom Horsky
11:00–12:00 Chapter 8:
Safety Considerations 
for Ion Implanter, 
RTP, and Furnace

Ewald Wiltsche, Silke Hamm
11:00–12:00 Chapter 14:
CMOS Scaling to Sub nm
Stacked Nanosheet CFETs

Santosh Kurinec
12:00–13:00 Chapter 3:
Ion transport and
Implantation control

Bo Vanderberg
12:00–13:00 Chapter 9:
Defect formation and 
annealing in Si and SiC

Kevin S. Jones
12:00 Closing session
 
13:00–13:45 Lunch Break 13:00–13:45 Lunch Break
13:45–15:00 Infineon Unlocked Tour 13:45–15:00 Infineon Unlocked Tour
15:00–16:00 Chapter 4:
Commercial Ion
Implantation Systems

Volker Häublein 
15:00–16:00 Chapter 10:
Diffusion and Activation of Dopants: The Science of Annealing Wafers

Wilfried Lerch 
16:00–17:00 Chapter 5:
Annealing Equipment Hardware: New Advancement in Ion Implantation Annealing for Si, Ge, SiC and GaN

Wilfried Lerch
16:00–17:00 Chapter 11:
Ion Channeling 
in Si and SiC

Sean Jones
17:00–19:00 Welcome reception    

Last update on 28 August 2026.
The program might be subject to necessary changes.

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